Computational Aspects of the Three-Dimensional Feature-Scale Simulation of Silicon-Nanowire Field-Effect Sesnsors for DNA Detection

Clemens Heitzinger, Purdue University - Main Campus
Gerhard Klimeck, Purdue University - Main Campus

Date of this Version



This material is based upon work supported by the National Science Foundation under Grant No. EEC-0228390, the Indiana 21st Century fund, and the Semiconductor Research Corporation.


In recent years DNA-sensors, and generally biosensors, with semiconducting transducers were fabricated and characterized. Although the concept of so-called BioFETs was proposed already two decades ago, its realization has become feasible only recently due to advances in process technology. In this paper a comprehensive and rigorous approach to the simulation of silicon-nanowire DNAFETs at the feature-scale is presented. It allows to investigate the feasibility of single-molecule detectors and is used to elucidate the performance that can be expected from sensors with nanowire diameters in the deca-nanometer range. Finally the computational challenges for the simulation of silicon-nanowire DNAsensors are discussed.


DNAFET, BioFET, Simulation, Silicon-nanowire


Electrical and Computer Engineering