Quantum Simulations of Dual Gate MOSFET Devices: Building and Deploying Community Nanotechnology Software Tools on nanoHUB.org

Shaikh Ahmed, Purdue University - Main Campus
Gerhard Klimeck, Purdue University - Main Campus
Derrick Kearney, Purdue University - Main Campus
Michael McLennan, Purdue University - Main Campus
M. P. Anantram, University of Waterloo

Date of this Version



Supported by the Indiana 21st Century Fund and National Science Foundation under Grant No. EEC-0228390. The computational resources of nanoHUB.org have been utilized. Discussions with Dragica Vasileska and Sayed Hasan are acknowledged.


Undesirable short-channel effects associated with the relentless downscaling of conventional CMOS devices have led to the emergence of new classes of MOSFETs. This has led to new and unprecedented challenges in computational nanoelectronics. The device sizes have already reached the level of tens of nanometers where quantum nature of charge-carriers dominates the device operation and performance. The goal of this paper is to describe an on-going initiative on nanoHUB.org to provide new models, algorithms, approaches, and a comprehensive suite of freelyavailable web-based simulation tools for nanoscale devices with capabilities not yet available commercially. Three software packages nanoFET, nanoMOS and QuaMC are benchmarked in the simulation of a widely-studied high-performance novel MOSFET device. The impact of quantum mechanical effects on the device properties is elucidated and key design issues are suggested.


nanoHUB, MOSFETs, Quantum effects, Online simulation, NEGF