Gate Induced g-factor Control and Dimensional Transition for Donors in Multi-Valley Semiconductors

Rajib Rahman, Purdue University - Main Campus
Seung H. Park, Purdue University - Main Campus
Timothy B. Boykin, The University of Alabama Huntsvile
Gerhard Klimeck, Purdue University - Main Campus
Sven Rogge, Delft University of Technology
Lloyd C. L. Hollenberg, University of Melbourne

Date of this Version



accepted fr publication in Physical Review B 2009


This work was supported by the Australian Research Council, NSA and ARO (contract number W911NF-04-1-0290). Part of the development of NEMO-3D was performed at JPL, Caltech under a contract with NASA. NCN/ computer resources were used.


The dependence of the g-factors of semiconductor donors on applied electric and magnetic fields is of immense importance in spin based quantum computation and in semiconductor spintronics. The donor g-factor Stark shift is sensitive to the orientation of the electric and magnetic fields and strongly influenced by the band-structure and spin-orbit interactions of the host. Using a multimillion atom tight-binding framework the spin-orbit Stark parameters are computed for donors in multi-valley semiconductors, silicon and germanium. Comparison with limited experimental data shows good agreement for a donor in silicon. Results for gate induced transition from 3D to 2D wave function confinement show that the corresponding g-factor shift in Si is experimentally observable.