Gate Induced g-factor Control and Dimensional Transition for Donors in Multi-Valley Semiconductors
Date of this Version
5-19-2009Citation
accepted fr publication in Physical Review B 2009
Acknowledgements
This work was supported by the Australian Research Council, NSA and ARO (contract number W911NF-04-1-0290). Part of the development of NEMO-3D was performed at JPL, Caltech under a contract with NASA. NCN/nanohub.org computer resources were used.
Abstract
The dependence of the g-factors of semiconductor donors on applied electric and magnetic fields is of immense importance in spin based quantum computation and in semiconductor spintronics. The donor g-factor Stark shift is sensitive to the orientation of the electric and magnetic fields and strongly influenced by the band-structure and spin-orbit interactions of the host. Using a multimillion atom tight-binding framework the spin-orbit Stark parameters are computed for donors in multi-valley semiconductors, silicon and germanium. Comparison with limited experimental data shows good agreement for a donor in silicon. Results for gate induced transition from 3D to 2D wave function confinement show that the corresponding g-factor shift in Si is experimentally observable.
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