• Home
  • Search
  • Browse Collections
  • My Account
  • About
  • DC Network Digital Commons Network™
Skip to main content

Purdue e-Pubs

  • Home
  • About
  • FAQ
  • My Account
  •  

Home > DP > NANO > NANOPUB > 41

Birck and NCN Publications

 

Low-frequency noise statistics for the breakdown characterization of ultrathin gate oxides

N. Z. Butt, School of Electrical and Computer Engineering
A. M. Chang, Department of Physics, Purdue University; Department of Physics, Duke University
H. Raza, Birck Nanotechnology Center and School of Electrical and Computer Engineering, Purdue University
Rashid Bashir, Birck Nanotechnology Center and School of Electrical and Computer Engineering, Purdue University
J. Liu, Electrical and Computer Engineering, University of Texas at Austin
D. L. Kwong, Electrical and Computer Engineering, University of Texas at Austin

Date of this Version

January 2006

Citation

Applied Physics Letters 88, 112901 (2006); DOI: 10.1063/1.2186114

This document has been peer-reviewed.

 

Abstract

We have investigated the statistics of low-frequency noise in the tunneling current of ultrathin oxides

 
Download this Article Download
 
Tell a Colleague
Print
Download Adobe Reader
COinS

Share

 
 

Search

Advanced Search

  • Notify me via email or RSS

Links

  • Purdue Libraries
  • Purdue University Press Journals

Links for Authors

  • Policies and Help Documentation
  • Submit Research

Browse

  • Collections
  • Disciplines
  • Authors
 
Digital Commons

Home | About | FAQ | My Account | Accessibility Statement

Privacy Copyright