Low-frequency noise statistics for the breakdown characterization of ultrathin gate oxides
N. Z. Butt, School of Electrical and Computer Engineering
A. M. Chang, Department of Physics, Purdue University; Department of Physics, Duke University
H. Raza, Birck Nanotechnology Center and School of Electrical and Computer Engineering, Purdue University
Rashid Bashir, Birck Nanotechnology Center and School of Electrical and Computer Engineering, Purdue University
J. Liu, Electrical and Computer Engineering, University of Texas at Austin
D. L. Kwong, Electrical and Computer Engineering, University of Texas at Austin
Date of this Version
January 2006 Citation
Applied Physics Letters 88, 112901 (2006); DOI: 10.1063/1.2186114
This document has been peer-reviewed.
Abstract
We have investigated the statistics of low-frequency noise in the tunneling current of ultrathin oxides
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