Low-frequency noise statistics for the breakdown characterization of ultrathin gate oxides

N. Z. Butt, School of Electrical and Computer Engineering
A. M. Chang, Department of Physics, Purdue University; Department of Physics, Duke University
H. Raza, Birck Nanotechnology Center and School of Electrical and Computer Engineering, Purdue University
Rashid Bashir, Birck Nanotechnology Center and School of Electrical and Computer Engineering, Purdue University
J. Liu, Electrical and Computer Engineering, University of Texas at Austin
D. L. Kwong, Electrical and Computer Engineering, University of Texas at Austin

Date of this Version

January 2006

Citation

Applied Physics Letters 88, 112901 (2006); DOI: 10.1063/1.2186114

This document has been peer-reviewed.

 

Abstract

We have investigated the statistics of low-frequency noise in the tunneling current of ultrathin oxides

 

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