Capacitance-voltage studies on enhancement-mode InGaAs metal-oxide-semiconductor field-effect transistor using atomic-layer-deposited AI2O3 gate dielectric

Y. Xuan, Birck Nanotechnology Center and School of Electrical and Computer Engineering, Purdue University,
H. C. Lin, Birck Nanotechnology Center and School of Electrical and Computer Engineering, Purdue University
P. D. Ye, Birck Nanotechnology Center and School of Electrical and Computer Engineering, Purdue University
G. D. Wilk, ASM America

Abstract

Atomic layer deposition