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Birck and NCN Publications

 

High-performance GaAs metal-insulator-semiconductor field-effect transistors enabled by self-assembled nanodielectrics

H. C. Lin, Birck Nanotechnology Center and School of Electrical and Computer Engineering, Purdue University
P. D. Ye, Birck Nanotechnology Center and School of Electrical and Computer Engineering, Purdue University
Y. Xuan, Birck Nanotechnology Center and School of Electrical and Computer Engineering, Purdue University
G. Lu, Department of Chemistry and the Materials Research Center, Northwestern University
A. Facchetti, Department of Chemistry and the Materials Research Center, Northwestern University
T. J. Marks, Department of Chemistry and the Materials Research Center, Northwestern University

Date of this Version

October 2006

Citation

Applied Physics Letters 89, 142101 (2006)

This document has been peer-reviewed.

 

Comments

DOI: 10.1063/1.2358202

Abstract

High-performance GaAs metal-insulator-semiconductor field-effect-transistors

 
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