Proton radiation hardness of single-nanowire transistors using robust organic gate nanodielectrics

Sanghyun Ju, School of Electrical and Computer Engineering, The Institute for Nanoelectronics and Computing,
Kang-Ho Lee, School of Electrical and Computer Engineering, The Institute for Nanoelectronics and Computing,
David B. Janes, School of Electrical and Computer Engineering, The Institute for Nanoelectronics and Computing,
Ramesh C. Dwivedi, NASA/Center for Applied Radiation Research (CARR), and Department of Electrical Engineering,
Habibah Baffour-Awuah, NASA/Center for Applied Radiation Research (CARR), and Department of Electrical Engineering,
R. Wilkins, NASA/Center for Applied Radiation Research (CARR), and Department of Electrical Engineering,
Myung-Han Yoon, Department of Chemistry, and the Materials Research Center, and the Institute for Nanoelectronics
Antonio Facchetti, Department of Chemistry, and the Materials Research Center, and the Institute for Nanoelectronics
Tobin J. Mark, Department of Chemistry, and the Materials Research Center, and the Institute for Nanoelectronics

Date of this Version

August 2006

Citation

DOI: 10.1063/1.2336744

This document has been peer-reviewed.

 

Abstract

In this contribution, the radiation tolerance of single ZnO nanowire field-effect transistors NW-FETs fabricated with a self-assembled superlattice SAS gate insulator is investigated and compared with that of ZnO NW-FETs fabricated with a 60 nm SiO2 gate insulator. A total-radiation dose study was performed using 10 MeV protons at doses of 5.71 and 285 krad Si . The threshold voltage Vth of the SAS-based ZnO NW-FETs is not shifted significantly following irradiation at these doses. In contrast, Vth parameters of the SiO2-based ZnO NW-FETs display average shifts of −4.0 and −10.9 V for 5.71 and 285 krad Si H+ irradiation, respectively. In addition, little change is observed in the subthreshold characteristics off current, subthreshold slope of the SAS-based ZnO NW-FETs following H+ irradiation. These results strongly argue that the bulk oxide trap density and interface trap density formed within the SAS and/or at the SAS-ZnO NW interface during H+ irradiation are significantly lower than those for the corresponding SiO2 gate dielectrics. The radiation-robust SAS-based ZnO NW-FETs are thus promising candidates for future space-based applications in electronics and flexible displays.

 
Ju Lee Janes2.pdf (34 kB)
Ju Lee Janes2.pdf

Share