Proton radiation hardness of single-nanowire transistors using robust organic gate nanodielectrics
Date of this VersionAugust 2006
This document has been peer-reviewed.
In this contribution, the radiation tolerance of single ZnO nanowire field-effect transistors NW-FETs fabricated with a self-assembled superlattice SAS gate insulator is investigated and compared with that of ZnO NW-FETs fabricated with a 60 nm SiO2 gate insulator. A total-radiation dose study was performed using 10 MeV protons at doses of 5.71 and 285 krad Si . The threshold voltage Vth of the SAS-based ZnO NW-FETs is not shifted significantly following irradiation at these doses. In contrast, Vth parameters of the SiO2-based ZnO NW-FETs display average shifts of −4.0 and −10.9 V for 5.71 and 285 krad Si H+ irradiation, respectively. In addition, little change is observed in the subthreshold characteristics off current, subthreshold slope of the SAS-based ZnO NW-FETs following H+ irradiation. These results strongly argue that the bulk oxide trap density and interface trap density formed within the SAS and/or at the SAS-ZnO NW interface during H+ irradiation are significantly lower than those for the corresponding SiO2 gate dielectrics. The radiation-robust SAS-based ZnO NW-FETs are thus promising candidates for future space-based applications in electronics and flexible displays.
Ju Lee Janes2.pdf