The effect of the strain relaxation in InAs/GaAs stacked quantum dots and multiple quantum wells on the Raman spectrum
Date of this VersionJune 2004
12th Int. Symp. "Nanostructures: Physics and Technology"
Atomist,ic-level simulations of the Raman shift in InAs/GaAs multiple quantum well (MQW) and stxketl cjuantuni dot (SQD) structures as a function of interlayer separation axe reported. The simulations utilize an aupcmted Krating nxodcl which includes anharmonicity corrections. It is demonstrated that the iiiteract,iori 1,etwet:il ;~iigled ist or led bonds is responsible for the penetration of the strain into the GaAs barrier. This result is in contrast to a complete strain relaxatioll of t,he CaAs barrier which would be predicted by continuurn n~odels. Tension along the growth direction result in the red shift of the GaAs LO Rarnan peak as the bnrrirr thickwss decreases in both, MQW and SQD, structures.