Nanoscale transistors: Physics and materials
Date of this Version1-1-2007
Network for Computational Nanotechnology, Dept. of Electrical and Computer Engineering, Purdue University
We analyze a modem-day 65nm MOSFET technology to determine its electrical characteristics and intrinsic ballistic efficiency. Using that information, we then predict the performance of similar devices comprised of different materials, such as higb-k gate dielectrics and III-V channel materials. The effects of series resistance are considered. Comparisons are made between the performance of these hypothetical devices and future generations of devices from the ITRS roadmap, including double-gate MOSFETs. We conclude that a Si channel device with a high-k gate dielectric and metal gate will outperform III-V channel materials for conventional CMOS applications, but will still not suffice in achieving long-term ITRS goals.