High-performance inversion-type enhancement-mode InGaAs MOSFET with maximum drain current exceeding 1 A/mm

Yi Xuan
Y Q. Wu, Purdue University
P. D. Ye, Birck Nanotechnology Center and School of Electrical and Computer Engineering, Purdue University

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High-performance inversion-type enhancementmode (E-mode) n-channel In0.65Ga0.35As MOSFETs with atomic-layer-deposited Al2O3 as gate dielectric are demonstrated. A 0.4-mu m gate-length MOSFET with an Al2O3 gate oxide thickness of 10 mn shows a gate leakage current that is less than 5 x 10(-6) A/cm(2) at 4.0-V gate bias, a threshold voltage of 0.4 V, a maximum drain current of 1.05 A/mm, and a transconductance of 350 mS/mm at drain voltage of 2.0 V. The maximum drain current and transconductance scale linearly from 40 mu m to 0.7 mu m. The peak effective mobility is similar to 1550 cm(2)/V center dot s at 0.3 MV/cm and decreases to similar to 650 cm(2)/V center dot s at 0.9 MV/cm. The obtained maximum drain current and transconductance are all record-high values in 40 years of E-mode III-V MOSFET research.