Electronic transport in InGaAs/Al2O3 nFinFETs

Shengwei Li, Fudan University
Yaodong Hu, Fudan University
Yangqing Wu, Huazhong University of Science and Technology
Daming Huang, Fudan University
Peide D. Ye, Birck Nanotechnology Center, Purdue University
Ming-Fu Li, Fudan University

Date of this Version



Based on the multiple subbands quasi-ballistic transport theory, we investigate the electronic transport of nano size In0.53Ga0.47As nFinFETs with Al2O3 gate dielectric, emphasizing the saturation current region. 1D mobile charge density and gate capacitance density are introduced for the first time to describe the nano-FinFET transport property under volume inversion. With the extracted effective channel mobility of electrons in the linear region from our experiments, the electron mean free path. in the channel with the value of 5-9 nm is obtained. With only one fitting parameter alpha = 0.31 for the critical length l = L(kT/q/v(d))(alpha) in the quasi-ballistic transport theory, the calculated drain current can fit all experimental data for various gate voltage V-g, source-drain voltage V-d, and temperature (240-332 K) in overall very good agreement. The backscattering coefficient r in the saturation region is larger than 0.8, indicating a large room for improvement for the present InGaAs FinFET technology and performance.


Nanoscience and Nanotechnology