Atomic layer deposited Al2O3 for gate dielectric and passivation layer of single-walled carbon nanotube transistors

Sunkook Kim, Purdue University - Main Campus
Yi Xuan, Purdue University
P. D. Ye, Birck Nanotechnology Center and School of Electrical and Computer Engineering, Purdue University
Saeed Mohammadi, School of Electrical and Computer Engineering, Purdue University
J H. Back, Department of Materials Science and Engineering, University of Illinois
Moonsub Shim, Department of Materials Science and Engineering, University of Illinois

Abstract

High performance single-walled carbon nanotube field effect transistors (SWCNT-FETs) fabricated with thin atomic layer deposited (ALD) Al2O3 as gate dielectrics and passivation layer are demonstrated. A 1.5 mu m gate-length SWCNT-FETs with 15 nm thick Al2O3 insulator shows a gate leakage current below 10(-11) A at -2.5 V