Phosphorene: An Unexplored 2D Semiconductor with a High Hole Mobility

Han Liu, Purdue University, Birck Nanotechnology Center
Adam T. Neal, Purdue University, Birck Nanotechnology Center
Zhen Zhu, Michigan State University
Xianfan Xu, Purdue University, Birck Nanotechnology Center
David Tomanek, Michigan State University
Peide D. Ye, Purdue University, Birck Nanotechnology Center
Zhe Luo, Michigan State University

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We introduce the 2D counterpart of layered black phosphorus, which we call phosphorene, as an unexplored p-type semiconducting material. Same as graphene and MoS2, single-layer phosphorene is flexible and can be mechanically exfoliated. We find phosphorene to be stable and, unlike graphene, to have an inherent, direct, and appreciable band gap. Our ab initio calculations indicate that the band gap is direct, depends on the number of layers and the in-layer strain, and is significantly larger than the bulk value of 0.31-036 eV. The observed photoluminescence peak of single-layer phosphorene in the visible optical range confirms that the band gap is larger than that of the bulk system. Our transport studies indicate a hole mobility that reflects the structural anisotropy of phosphorene and complements n-type MoS2. At room temperature, our few-layer phosphorene field-effect transistors with 1.0 mu m channel length display a high on-current of 194 mA/mm, a high hole field-effect mobility of 286 cm(2) N.s, and an on/off ratio of up to 10(4). We demonstrate the possibility of phosphorene integration by constructing a 2D CMOS inverter consisting of phosphorene PMOS and MoS2 NMOS transistors.


Nanoscience and Nanotechnology