Performance and Variability Studies of InGaAs Gate-all-Around Nanowire MOSFETs

Nathan Conrad, Purdue University
SangHong Shin
Jiangjiang Gu, Purdue University, Birck Nanotechnology Center
Mengwei Si, Purdue University
Heng Wu, Purdue University
Muhammad Masuduzzaman, Purdue University
Muhammad A. Alam, Purdue University
Peide D. Ye, Purdue University, Birck Nanotechnology Center

Date of this Version



Furthering Si CMOS scaling requires development of high-mobility channel materials and advanced device structures to improve the electrostatic control. We demonstrate the fabrication of gate-all-around (GAA) indium gallium arsenide (InGaAs) MOSFETs with highly scaled atomic-layer-deposited gate dielectrics. InGaAs, with its high electron mobility, allows higher drive currents and other on-state performance compared to silicon. The GAA structure provides superior electrostatic control of the MOSFET channel with outstanding off-state performance. A subthreshold slope of 72 mV/dec, electron mobility of 764 cm(2)/V . s, and an on-current of 1.59 mA/mu m are demonstrated, for example. Variability studies on on-state and off-state performances caused by the number of nanowire channels are also presented.


Nanoscience and Nanotechnology