Homogeneous AlGaN/GaN superlattices grown on free-standing (1(1)over-bar00) GaN substrates by plasma-assisted molecular beam epitaxy
Date of this Version
12-2-2013Abstract
Two-dimensional and homogeneous growth of m-plane AlGaN by plasma-assisted molecular beam epitaxy has been realized on free-standing (1 (1) over bar 00) GaN substrates by implementing high metal-to-nitrogen (III/N) flux ratio. AlN island nucleation, often reported for m-plane AlGaN under nitrogen-rich growth conditions, is suppressed at high III/N flux ratio, highlighting the important role of growth kinetics for adatom incorporation. The homogeneity and microstructure of m-plane AlGaN/GaN superlattices are assessed via a combination of scanning transmission electron microscopy and high resolution transmission electron microscopy (TEM). The predominant defects identified in dark field TEM characterization are short basal plane stacking faults (SFs) bounded by either Frank-Shockley or Frank partial dislocations. In particular, the linear density of SFs is approximately 5 x 10(-5) cm(-1), and the length of SFs is less than 15 nm. (C) 2013 AIP Publishing LLC.
Discipline(s)
Nanoscience and Nanotechnology
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This is the publisher PDF of Shao, J., Zakharov, D.N., Edmunds, C., Malis, O., and Manfra, M. J. "Homogeneous AIGaN/GaN superlattices grown on free-standing (1 1 ¯ 00) GaN substrates by plasma-assisted molecular beam epitaxy." Applied Physics Letters 103, 232103 (2013). Copyright AIP, it is available at http://dx.doi.org/10.1063/1.4836975.