Molecular Doping of Multilayer MoS2 Field-Effect Transistors: Reduction in Sheet and Contact Resistances

Yuchen Du, Birck Nanotechnology Center, Purdue University
Han Liu, Birck Nanotechnology Center, Purdue University
Adam T. Neal, Birck Nanotechnology Center, Purdue University
Mengwei Si, Birck Nanotechnology Center, Purdue University
Peide D. Ye, Birck Nanotechnology Center, Purdue University

Abstract

For the first time, polyethyleneimine (PEI) doping on multilayer MoS2 field-effect transistors is investigated. A 2.6 times reduction in sheet resistance and 1.2 times reduction in contact resistance have been achieved. The enhanced electrical characteristics are also reflected in a 70% improvement in ON-current and 50% improvement in extrinsic field-effect mobility. The threshold voltage confirms a negative shift upon the molecular doping. All studies demonstrate the feasibility of PEI molecular doping in MoS2 transistors and its potential applications in layer-structured semiconducting 2-D crystals.

Discipline(s)

Nanoscience and Nanotechnology