Quantum Hall effect in monolayer-bilayer graphene planar junctions
Date of this Version
9-6-2013Citation
Jifa Tian. Yongjin Jiang, Isaac Childres, Helin Cao, Jiangping Hu, and Yong P. Chen"Quantum Hall Effect in Monolayer-bilayer Graphene Planar Junctions." Physical Review B 88 (2013): n. pag. Journals.aps.org. American Physical Society, 6 Sept. 2013. Web.
Abstract
The Hall resistance of a homogeneous electron system is well known to be antisymmetric with respect to the magnetic field and the sign of charge carriers. We have observed that such symmetries no longer hold in planar hybrid structures consisting of partly single layer graphene (SLG) and partly bilayer graphene (BLG) in the quantum Hall (QH) regime. In particular, the Hall resistance across the SLG and BLG interface is observed to exhibit quantized plateaus that switch between those characteristic of SLG QH states and BLG QH states when either the sign of the charge carriers (controlled by a back gate) or the direction of the magnetic field is reversed. Simultaneously reversing both the carrier type and the magnetic field gives rise to the same quantized Hall resistances. The observed SLG-BLG interface QH states, with characteristic asymmetries with respect to the signs of carriers and magnetic field, are determined only by the chirality of the QH edge states and can be explained by a Landauer-Buttiker analysis applied to such graphene hybrid structures involving two regions of different Landau level structures.
Discipline(s)
Nanoscience and Nanotechnology
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Comments
This is the published version of Jifa Tian, Yongjin Jiang, Isaac Childres, Helin Cao, Jiangping Hu, and Yong P. Chen. 6 September 2013. Quantum Hall effect in monolayer-bilayer graphene planar junctions. First published in the Physical Review B and is available online at: http://journals.aps.org/prb/abstract/10.1103/PhysRevB.88.125410.