Near sputter-threshold GaSb nanopatterning

Osman El-Atwani, Birck Nanotechnology Center, Purdue University
Sean Gonderman, Birck Nanotechnology Center, Purdue University
Jean Paul Allain, Birck Nanotechnology Center, Purdue University

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Copyright 2013 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in J. Appl. Phys. 114, 104308 (2013); and may be found at (URL/link for published article abstract). The following article has been submitted to/accepted by [Name of Journal]. After it is published, it will be found at . Copyright 2013 Osman El-Atwani. This article is distributed under a Creative Commons Attribution 3.0 Unported License.


Nanopatterning at sputter-threshold energies with Ar irradiation of GaSb (100) surfaces is presented. Comparison with high-energy irradiations up to 1000 eV is conducted measuring in-situ the composition evolution over irradiation time at early stages (e. g., < 10(17) cm(-2)) and up to nanostructure saturation (e. g., similar to 10(18) cm(-2)). Low-energy irradiation is conducted for energies between 15-100 eV and a low-aspect ratio nanostructured dot formation is found. Furthermore, the role of oxide on GaSb is found to delay nanostructure formation and this is predominant at energies below 100 eV. In-situ quartz crystal microbalance measurements collect sputtered particles yielding the sputter rate at threshold energies indicating a correlation between erosion and surface composition consistent with recent theoretical models. Ion-induced segregation is also found and indicated by both compositional measurements of both the surface and the sputtered plume. (C) 2013 AIP Publishing LLC.


Nanoscience and Nanotechnology