Extraction of Channel Electron Effective Mobility in InGaAs/Al2O3 n-FinFETs

Yaodong Hu, Fudan University
Shengwei Li, Fudan University
Guangfan Jiao, Fudan University
Y. Q. Wu, Birck Nanotechnology Center, Purdue University
Daming Huang, Fudan University
Peide D. Ye, Birck Nanotechnology Center, Purdue University
Ming-Fu Li, Fudan University

Date of this Version



A compact set of equations based on the multiple subbands quasi-ballistic transport theory is developed, and is used to investigate the channel electron effective mobility in recently reported In0.53Ga0.47As/Al2O3 tri-gate n-FinFET. The extracted electron effective mobility mu(n) is around 370 cm(2)/V.s at low V-g-V-th bias at room temperature and decreases with increasing V-g, and increases with increasing temperature (240-332K). It is very different from the case of Si n-MOSFETs, where the electron mobility decreases with increasing temperature. The low channel effective mobility and the ab-normal temperature dependence of mu(n) are ascribed to the high acceptor interface trap and border trap energy densities in the conduction band energy of InGaAs. The ballistic channel resistance R-Ball at low V-ds is calculated and compared with the measured channel resistance R-CH. The low transmission coefficient T = R-Ball/R-CH approximate to 0.06 to 0.05 indicates that there is a large room to improve the InGaAs/Al2O3 n-FinFET performance.


Nanoscience and Nanotechnology