Surface morphology evolution of m-plane (1(1)over-bar00) GaN during molecular beam epitaxy growth: Impact of Ga/N ratio, miscut direction, and growth temperature
Date of this Version7-14-2013
We present a systematic study of morphology evolution of [1 (1) over bar 00] m-plane GaN grown by plasma-assisted molecular beam epitaxy on free-standing m-plane substrates with small miscut angles towards the -c [000 (1) over bar] and +c  directions under various gallium to nitrogen (Ga/N) ratios at substrate temperatures T = 720 degrees C and T = 740 degrees C. The miscut direction, Ga/N ratio, and growth temperature are all shown to have a dramatic impact on morphology. The observed dependence on miscut direction supports the notion of strong anisotropy in the gallium adatom diffusion barrier and growth kinetics. We demonstrate that precise control of Ga/N ratio and substrate temperature yields atomically smooth morphology on substrates oriented towards _c  as well as the more commonly studied -c [000 (1) over bar] miscut substrates. (C) 2013 AIP Publishing LLC.
Nanoscience and Nanotechnology