Hysteretic response of chemical vapor deposition graphene field effect transistors on SiC substrates

Edward Cazalas, Penn State University
Isaac Childres, Birck Nanotechnology Center, Purdue University
Amanda Majcher, Penn State University
Ting Fung Chung, Birck Nanotechnology Center, Purdue University
Yong P. Chen, Birck Nanotechnology Center, Purdue University
Igor Jovanovic, Birck Nanotechnology Center, Purdue University

Date of this Version



DOI: 10.1063/1.4816426


Copyright 2013 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in Appl. Phys. Lett. 103, 053123 (2013); and may be found at http://dx.doi.org/10.1063/1.4816426.

The following article has been submitted to/accepted by Applied Physics Letters. Copyright 2013. Edward Cazalas, Isaac Childres, Amanda Majcher, Ting-Fung Chung, Yong P. Chen and Igor Jovanovic. This article is distributed under a Creative Commons Attribution 3.0 Unported License.


Graphene field effect transistors (GFETs) fabricated by chemical vapor deposition graphene deposited onto SiC substrates exhibit sensitivity to broadband visible light. The hysteretic nature of this GFET type was studied utilizing a new current-voltage measurement technique in conjunction with current-time measurements. This measurement method accounts for hysteretic changes in graphene response and enables transfer measurements that can be attributed to fixed gate voltages. Graphene hysteresis is shown to be consistent with electrochemical p-type doping, and current-time measurements clearly resolve a hole to electron to hole carrier transition in graphene with a single large change in gate voltage. (C) 2013 AIP Publishing LLC.


Nanoscience and Nanotechnology