High precision dynamic alignment and gap control for optical near-field nanolithography

Xiaolei Wen, Birck Nanotechnology Center, Purdue University; University of Science & Technology - China
Luis M. Traverso, Birck Nanotechnology Center, Purdue University
Pornsak Srisungsitthisunti, Birck Nanotechnology Center, Purdue University
Xianfan Xu, Birck Nanotechnology Center, Purdue University
Euclid E. Moon, Massachusetts Institute of Technology (MIT)

Date of this Version



DOI: 10.1116/1.4809519


The authors demonstrate the use of interferometric-spatial-phase-imaging (ISPI) to control a gap distance of the order of nanometers for parallel optical near-field nanolithography. In optical near-field nanolithography, the distance between the optical mask and the substrate needs to be controlled within tens of nanometers or less. The ISPI technique creates interference fringes from checkerboard gratings fabricated on the optical mask, which are used to determine the gap distance between the mask and the substrate surfaces. The sensitive of this gapping technique can reach 0.15 nm. With the use of ISPI and a dynamic feedback control system, the authors can precisely align the mask and the substrate and keep variation of the gap distance below 6 nm to realize parallel nanolithography. (C) 2013 American Vacuum Society.


Nanoscience and Nanotechnology