Silicon quantum electronics

Floris A. Zwanenburg, University of Twente; University of New South Wales
Andrew S. Dzurak, University of New South Wales
Andrea Morello, University of New South Wales
Michelle Y. Simmons, University of New South Wales
Lloyd C. L. Hollenberg, University of Melbourne
Gerhard Klimeck, Birck Nanotechnology Center, Network for Computational Nanotechnology, Purdue University
Sven Rogge, University of New South Wales; Delft University of Technology
Susan N. Coppersmith, University of Wisconsin - Madison
Mark A. Eriksson, University of Wisconsin - Madison

Date of this Version



This is the published version of [author name Floris A. Zwanenburg, Andrew S. Dzurak, Andrea Morello, Michelle Y. Simmons, Lloyd C. L. Hollenberg, Gerhard Klimeck, Sven Rogge, Susan N. Coppersmith, and Mark A. Eriksson. Published 10 July 2013. Silicon quantum electronics. First published in the Review of Modern Physics and is available online at:


This review describes recent groundbreaking results in Si, Si/SiGe, and dopant-based quantum dots, and it highlights the remarkable advances in Si-based quantum physics that have occurred in the past few years. This progress has been possible thanks to materials development of Si quantum devices, and the physical understanding of quantum effects in silicon. Recent critical steps include the isolation of single electrons, the observation of spin blockade, and single-shot readout of individual electron spins in both dopants and gated quantum dots in Si. Each of these results has come with physics that was not anticipated from previous work in other material systems. These advances underline the significant progress toward the realization of spin quantum bits in a material with a long spin coherence time, crucial for quantum computation and spintronics.


Nanoscience and Nanotechnology