Investigation of ripple-limited low-field mobility in large-scale graphene nanoribbons

M. Luisier, Swiss Federal Institute of Technology Zurich
T. B. Boykin, University of Alabama - Huntsville
Z. Ye, University of California - Merced
A. Martini, University of California - Merced
Gerhard Klimeck, Network for Computational Nanotechnology, Birck Nanotechnology Center, Purdue University
N. Kharche, Brookhaven National Laboratory
X. Jiang, Rensselaer Polytechnic Institute
S. Nayak, Rensselaer Polytechnic Institute; Indian Inst Technol Bhubaneswar

Date of this Version



Copyright 2013 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in Appl. Phys. Lett. 102, 253506 (2013); and may be found at The following article has been accepted by Applied Physics Letters. Copyright (2013) M. Luisier, T. B. Boykin, Z. Ye, A. Martini, G. Klimeck, N. Kharche, X. Jiang and S. Nayak. This article is distributed under a Creative Commons Attribution 3.0 Unported License.


Combining molecular dynamics and quantum transport simulations, we study the degradation of mobility in graphene nanoribbons caused by substrate-induced ripples. First, the atom coordinates of large-scale structures are relaxed such that surface properties are consistent with those of graphene on a substrate. Then, the electron current and low-field mobility of the resulting non-flat nanoribbons are calculated within the Non-equilibrium Green's Function formalism in the coherent transport limit. An accurate tight-binding basis coupling the sigma- and pi-bands of graphene is used for this purpose. It is found that the presence of ripples decreases the mobility of graphene nanoribbons on SiO2 below 3000 cm(2)/Vs, which is comparable to experimentally reported values. (C) 2013 AIP Publishing LLC.


Nanoscience and Nanotechnology