Temperature-dependence of negative differential resistance in GaN/AlGaN resonant tunneling structures

D. Li, Birck Nanotechnology Center, Purdue University
J. Shao, Birck Nanotechnology Center, Purdue University
L. Tang, Birck Nanotechnology Center, Purdue University
Geoff C. Gardner, Birck Nanotechnology Center, Purdue University
Michael J. Manfra, Birck Nanotechnology Center, Purdue University
O. Malis, Birck Nanotechnology Center, Purdue University
C. Edmunds, Birck Nanotechnology Center, Purdue University

Abstract

We report a systematical study of the temperature-dependence of negative deferential resistance (NDR) from double-barrier Al0.35Ga0.65N/GaN resonant tunneling diodes grown by plasma-assisted molecular-beam epitaxy on free-standing GaN substrates. The current-voltage (I-V) characterization was done in the 6-300 K temperature range. A clear NDR signature was observed for mesa sizes of 4 x 4 mu m(2) at temperatures below 130 K. This suggests that the resonant tunneling is the dominant charge transport mechanism in our devices.

Discipline(s)

Nanoscience and Nanotechnology