Statistical Study of Deep Submicron Dual-Gated Field-Effect Transistors on Monolayer Chemical Vapor Deposition Molybdenum Disulfide Films

Han Liu, Birck Nanotechnology Center, Purdue University
Mengwei Si, Birck Nanotechnology Center, Purdue University
Sina Najmaei, Rice University
Adam T. Neal, Birck Nanotechnology Center, Purdue University
Yuchen Du, Birck Nanotechnology Center, Purdue University
Pulickel M. Ajayan, Rice University
Jun Lou, Rice University
Peide Ye, Birck Nanotechnology Center, Purdue University

Date of this Version



Monolayer molybdenum disulfide (MoS2) with a direct band gap of 1.8 eV is a promising two-dimensional material with a potential to surpass graphene in next generation nanoelectronic applications. In this Letter, we synthesize E monolayer MoS2 on Si/SiO2 substrate via chemical vapor deposition (CVD) method and comprehensively study the device performance based on dual-gated MoS2 field-effect transistors. Over 100 devices are studied to obtain a statistical description of device performance in CVD MoS2. We examine and scale down the channel length of the transistors to 100 nm and achieve record high drain current of 62.5 mA/mm in CVD monolayer MoS2 film ever reported. We further extract the intrinsic contact resistance of low work function metal Ti on monolayer CVD MoS2 with an expectation value of 175, which can be significantly decreased to 10 by appropriate gating. Finally, field-effect mobilities (mu(FE)) of the carriers at various channel lengths are obtained. By taking the impact of contact resistance into account, an average and maximum intrinsic mu(FE) is estimated to be 13.0 and 21.6 cm(2)/(V s) in monolayer CVD MoS2 films, respectively.


Nanoscience and Nanotechnology