Noninvasive Spatial Metrology of Single-Atom Devices

Fahd A. Mohiyaddin, University of New South Wales
Rajib Rahman, Sandia National Laboratory
Rachpon Kalra, University of New South Wales
Gerhard Klimeck, Network for Computational Nanotechnology, Birck Nanotechnology Center, Purdue University
Lloyd C. L. Hollenberg, University of Melbourne
Jarryd J. Pla, University of New South Wales
Andrew S. Dzurak, University of New South Wales
Andrea Morello, University of New South Wales

Date of this Version



The exact location of a single dopant atom in a nanostructure can influence or fully determine the functionality of highly scaled transistors or spin-based devices. We demonstrate here a noninvasive spatial metrology technique, based on the microscopic modeling of three electrical measurements on a single-atom (phosphorus in silicon) spin qubit device: hyperfine coupling, ground state energy, and capacitive coupling to nearby gates. This technique allows us to locate the qubit atom with a precision of +/- 2.5 nm in two directions and +/- 15 nm in the third direction, which represents a 1500-fold improvement with respect to the prefabrication statistics obtainable from the ion implantation parameters.


Nanoscience and Nanotechnology