Numerical study of the turnoff behavior of high-voltage 4H-SiC IGBTs

TOMOHIRO TAMAKI, PURDUE UNIVERSITY
Ginger G. Walden, Birck Nanotechnology Center, Purdue University
Yang Sui, Purdue University
James A. Cooper, Birck Nanotechnology Center, Purdue University

Date of this Version

8-1-2008

This document has been peer-reviewed.

 

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Article available at: http://ieeexplore.ieee.org/search/wrapper.jsp?arnumber=4578887

Abstract

The turnoff behavior of high-voltage 4H-SiC p-channel insulated gate bipolar transistors is investigated by 2-D numerical simulations. Minority carrier lifetime in the nonpunchthrough buffer layer is found to be the major factor determining switching

 

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