Utilizing the Unique Properties of Nanowire MOSFETs for RF Applications

Ali Razavieh, Birck Nanotechnology Center, Purdue University
Saumitra Mehrotra, Birck Nanotechnology Center, Purdue University
Navab Singh, Agency for Science Technology & Research (ASTAR)
Gerhard Klimeck, Network for Computational Nanotechnology, Birck Nanotechnology Center, Purdue University
David B. Janes, Birck Nanotechnology Center, Purdue University
Joerg Appenzeller, Birck Nanotechnology Center, Purdue University

Date of this Version



Nano Letters, 2013, 13 (4), pp 1549–1554


Nanostructures have attracted a great deal of attention because of their potential usefulness for high density applications. More importantly, they offer excellent avenues for improved scaling beyond conventional approaches. Less attention has been paid to their intrinsic potential for distinct circuit applications. Here we discuss how a combination of 1-D transport, operation in the quantum capacitance limit, and ballistic transport can be utilized for certain RF applications. In particular this work explores how the above transport properties can provide a high degree of transconductance linearity at the device level. The article also discusses how device characteristics can be interpreted and analyzed in terms of device linearity if the above conditions are not ideally fulfilled. Using aggressively scaled silicon nanowire field-effect transistors as an example device in this work provides new insights toward the proper choice of channel material to improve linearity through the above-mentioned transport conditions. According to this study, a high degree of linearity occurs feasible while operating at low supply voltages making low-dimensional systems, and here in particular nanowires, an interesting candidate for portable RF applications.


Nanoscience and Nanotechnology