Optoelectronic measurement of x-ray synchrotron pulses: A proof of concept demonstration

Stephen M. Durbin, Purdue University
Aamer Mahmood, Birck Nanotechnology Center, Purdue University
Marc W. Caffee, Purdue University
Sergei Savikhin, Purdue University
Eric M. Dufresne, Argonne National Laboratory
Haidan Wen, Argonne National Laboratory
Yuelin Li, Argonne National Laboratory

Date of this Version



Appl. Phys. Lett. 102, 051109 (2013)


Copyright (2013) American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in Appl. Phys. Lett. 102, 051109 (2013) and may be found at http://dx.doi.org/10.1063/1.4791559. The following article has been submitted to/accepted by Applied Physics Journal. Copyright (2013) Stephen M. Durbin, Aamer Mahmood, Marc Caffee, Sergei Savikhin, Eric M. Dufresne, Haidan Wen and Yuelin Li. This article is distributed under a Creative Commons Attribution 3.0 Unported License.


Optoelectronic detection using photoconductive coplanar stripline devices has been applied to measuring the time profile of x-ray synchrotron pulses, a proof of concept demonstration that may lead to improved time-resolved x-ray studies. Laser sampling of current vs time delay between 12 keV x-ray and 800 nm laser pulses reveal the similar to 50 ps x-ray pulse width convoluted with the similar to 200 ps lifetime of the conduction band carriers. For GaAs implanted with 8 MeV protons, a time profile closer to the x-ray pulse width is observed. The protons create defects over the entire depth sampled by the x-rays, trapping the x-ray excited conduction electrons and minimizing lifetime broadening of the electrical excitation. (C) 2013 American Institute of Physics. [http://dx.doi.org/10.1063/1.4791559]


Nanoscience and Nanotechnology