Strong heavy-to-light hole intersubband absorption in the valence band of carbon-doped GaAs/AlAs superlattices
Date of this Version
2-7-2013Citation
: Journal of Applied Physics 113, 053103 (2013); doi: 10.1063/1.4790305
Abstract
We report strong mid-infrared absorption of in-plane polarized light due to heavy-to-light hole intersubband transitions in the valence band of C-doped GaAs quantum wells with AlAs barriers. The transition energies are well reproduced by theoretical calculations including layer inter-diffusion. The inter-diffusion length was estimated to be 8 +/- 2 angstrom, a value that is consistent with electron microscopy measurements. These results highlight the importance of modeling the nanoscale structure of the semiconductors for accurately reproducing intra-band transition energies of heavy carriers such as the holes. (C) 2013 American Institute of Physics. [http://dx.doi.org/10.1063/1.4790305]
Discipline(s)
Nanoscience and Nanotechnology
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Comments
This is the published version of M. I. Hossain, Z. Ikonic, J. Watson, J. Shao, P. Harrison, M. J. Manfra and O. Malis. 1 February 2013. Strong heavy-to-light hole intersubband absorption in the valence band of carbon-doped GaAs/AlAs superlattices. First published in the Physical Review B and is available online at: http://dx.doi.org/10.1063/1.4790305