Dopant Metrology in Advanced FinFETs

G. Lansbergen, Delft University of Technology
R. Rahman, Sandia National Laboratory
G. C. Tettamanzi, Delft University of Technology; University of New South Wales
J. Verduijn, Delft University of Technology; University of New South Wales
L. C. L. Hollenberg, University of Melbourne
Gerhard Klimeck, Birck Nanotechnology Center, Purdue University; California Institute of Technology
S. Rogge, Delft University of Technology; University of New South Wales

Abstract

Ultra-scaled FinFET transistors bear unique fingerprint-like device-to-device differences attributed to random single impurities. This paper describes how, through correlation of experimental data with multimillion atom tight-binding simulations using the NEMO 3-D code, it is possible to identify the impurity's chemical species and determine their concentration, local electric field and depth below the Si/SiO2 interface. The ability to model the excited states rather than just the ground state is the critical component of the analysis and allows the demonstration of a new approach to atomistic impurity metrology.

Discipline(s)

Nanoscience and Nanotechnology