GaSb Metal-Oxide-Semiconductor Capacitors with Atomic-Layer-Deposited HfAlO as Gate Dielectric
Date of this Version12-28-2011
Electrochem. Solid-State Lett. 2012 volume 15, issue 3, H51-H54
An interface characterization of p-type GaSb metal-oxide-semiconductor (MOS) structures has been performed with Al-first and Hf-first HfAlO gate dielectrics deposited via atomic layer deposition. The Al-first process is found to improve the characteristic of high-k/GaSb MOS such as breakdown strength, frequency dispersion in accumulation region and gate dependent capacitance modulation. From temperature dependent conductance method, an interface trap density of 4 x 10(12) cm(-2) eV(-1) near the valence band edge is extracted for Al-first HfAlO/GaSb. The border trap density is found to be 4.5 x 10(19) cm(-3) with a barrier height of 2.75 eV below the valence band edge of GaSb. (C) 2011 The Electrochemical Society. [DOI: 10.1149/2.001203esl] All rights reserved.
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