Gate-induced quantum-confinement transition of a single dopant atom in a silicon FinFET

G P. Lansbergen, Delft Univ Technol, Kavli Inst Nanosci
R Rahman, Purdue University
C J. Wellard, Univ Melbourne
I Woo, Purdue University
J Caro, Delft Univ Technol, Kavli Inst Nanosci
N Collaert, IMEC, B-3001 Louvain, Belgium
S Biesemans, IMEC, B-3001 Louvain, Belgium
Gerhard Klimeck, Network for Computational Nanotechnology, Purdue University
LC L. Hollenberg, Univ Melbourne
S Rogge, Delft Univ Technol, Kavli Inst Nanosci

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This document has been peer-reviewed.



The ability to build structures with atomic precision is one of the defining features of nanotechnology. Achieving true atomic- level functionality, however, requires the ability to control the wavefunctions of individual atoms. Here, we investigate an approach that could enable just that. By collecting and analysing transport spectra of a single donor atom in the channel of a silicon FinFET, we present experimental evidence for the emergence of a new type of hybrid molecule system. Our experiments and simulations suggest that the transistor's gate potential can be used to control the degree of hybridization of a single electron donor state between the nuclear potential of its donor atom and a nearby quantum well. Moreover, our theoretical analysis enables us to determine the species of donor (arsenic) implanted into each device as well as the degree of confinement imposed by the gate.