Real-Time in Situ Electronic Monitoring of Dynamic Contact Behavior of MEMS High-G Switches

Nithin Raghunathan, Birck Nanotechnology Center, Purdue University
Brett Sanborn, Birck Nanotechnology Center, Purdue University
A. Venkattraman, Birck Nanotechnology Center, Purdue University
Alina A. Alexeenko, Birck Nanotechnology Center, Purdue University
Weinong Chen, Birck Nanotechnology Center, Purdue University
Dimitrios Peroulis, Birck Nanotechnology Center, Purdue University

Abstract

This paper presents for the first time real-time contact monitoring of packaged high-g switches under acceleration loads up to 50,000 g. Such loads are typical in impact and pyroshock phenomena such as multistage rocket launches and earth penetrating weapons. Contact monitoring is performed using a fully electronic methodology utilizing an ultra low-power (W) CMOS interface that is directly integrated to the MEMS chip and accurately senses the capacitance change around the contact region at a sampling rate greater than 500 kHz. Experimental and modeling results agree to within 5% for the switch closing time under high-g condition, confirming the validity of the measurement technique.

Discipline(s)

Nanoscience and Nanotechnology