Ultrafast Submicron Thermal Characterization of Integrated Circuits

Ali Shakouri, Birck Nanotechnology Center, Purdue University; University of California - Santa Cruz
Kerry Maize, Birck Nanotechnology Center, Purdue University
Philip Jackson, Birck Nanotechnology Center, Purdue University
Xi Wang, Birck Nanotechnology Center, Purdue University
Bjorn Vermeersch, Birck Nanotechnology Center, Purdue University
Kazuaki Yazawa, Birck Nanotechnology Center, Purdue University

Date of this Version



19th IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA), 2-6 July 2012.: Ultrafast submicron thermal characterization of integrated circuits


Static and dynamic hot spots limit the performance and reliability of electronic devices and ICs. We show that transient thermoreflectance imaging using a CCD camera can measure temperature distribution in chips with 0.1 degrees C temperature, 100 nanosecond time, and submicron spatial resolution. It is possible to measure the temperature on metal interconnects in wire-bonded chips and, with through-the-substrate infrared illumination, at the transistor level in flip-chip packages. Recent results in transient thermal imaging of GaN transistors, ESD protection devices, solar cells, and LEDs are presented. We show it is possible to identify non-uniform temperature rise and defects in 200 to 300 nm interconnect vias that have been stressed at high temperatures. Power blurring techniques can be used to obtain transient temperature profiles in packaged IC chips with a calculation time orders of magnitude faster than finite element analysis. The technique is well suited to solve the inverse problem and extract the power dissipation profile from the measured thermal map.


Nanoscience and Nanotechnology