Laser direct growth of graphene on silicon substrate

Dapeng Wei, Purdue University
Xianfan Xu, Birck Nanotechnology Center, Purdue University

Date of this Version



Appl. Phys. Lett. 100, 023110 (2012)


Copyright 2012 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in Appl. Phys. Lett. 100, 023110 (2012) and may be found at The following article has been submitted to/accepted by Applied Physics Letters. Copyright 2012 Dapeng Wei and Xianfan Xu. This article is distributed under a Creative Commons Attribution 3.0 Unported License.


We demonstrate laser direct growth of few layer graphene on a silicon substrate. In our study, a continuous wave laser beam was focused on a poly(methyl methacrylate) (PMMA)-coated silicon wafer to evaporate PMMA and melt the silicon wafer. Carbon atoms, decomposed from PMMA, were absorbed by the molten silicon surface, and then separated from silicon in the cooling process to form few-layer graphene. This Si-catalyzed method will provide a new approach and platform for applications of graphene. (C) 2012 American Institute of Physics. [doi: 10.1063/1.3675636]


Nanoscience and Nanotechnology