An All-Silicon Passive Optical Diode

Li Fan, Birck Nanotechnology Center, Purdue University
Jian Wang, Birck Nanotechnology Center, Purdue University
Leo T. Varghese, Birck Nanotechnology Center, Purdue University
Hao Shen, Birck Nanotechnology Center, Purdue University
Ben Niu, Birck Nanotechnology Center, Purdue University
Yi Xuan, Birck Nanotechnology Center, Purdue University
Andrew M. Weiner, Birck Nanotechnology Center, Purdue University
Minghao Qi, Birck Nanotechnology Center, Purdue University

Abstract

A passive optical diode effect would be useful for on-chip optical information processing but has been difficult to achieve. Using a method based on optical nonlinearity, we demonstrate a forward-backward transmission ratio of up to 28 decibels within telecommunication wavelengths. Our device, which uses two silicon rings 5 micrometers in radius, is passive yet maintains optical nonreciprocity for a broad range of input power levels, and it performs equally well even if the backward input power is higher than the forward input. The silicon optical diode is ultracompact and is compatible with current complementary metal-oxide semiconductor processing.

Discipline(s)

Nanoscience and Nanotechnology