Dimensionality in metal-oxide-semiconductor field-effect transistors: A comparison of one-dimensional and two-dimensional ballistic transistors

Raseong Kim, Purdue University
Neophytos C. Neophytou, Purdue University - Main Campus
Abhijeet Paul, Purdue University
Gerhard Klimeck, Birck Nanotechnology Center, Purdue University
Mark S. Lundstrom, School of Electrical and Computer Engineering, Birck Nanotechnology Center, Purdue University

Date of this Version

July 2008

Citation

DOI: 10.1116/1.2908442

Acknowledgements

Network for Computational Nanotechnology, Purdue University, West Lafayette, Indiana 47907

This document has been peer-reviewed.

 

Abstract

One-dimensional (1D) and two-dimensional (2D) metal-oxide-semiconductor field-effect transistors are compared using an approach based on the top-of-the-barrier ballistic transport model. The results for model devices show that 1D and 2D transistors behave quite similarly if the electrostatics is assumed to be perfect. Distinctive features of 1D transport are difficult to observe at room temperature. The effects of band structure on I-V and C-V characteristics of Si and InAs nanowire transistors are also examined using the sp(3)d(5)s(*) tight-binding model. It is found that band structure effects in 1D transistors are most distinctively reflected in the drain current versus gate bias or transconductance versus gate bias for low drain bias at low temperatures. Some effects may also be observed in nanowire C-V characteristics. (C) 2008 American Vacuum Society.

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