The integration of high-k dielectric on two-dimensional crystals by atomic layer deposition

Han Liu, Purdue University
Kun Xu, Purdue University
Xujie Zhang, Purdue University
Peide Ye, Birck Nanotechnology Center, Purdue University

Date of this Version



Appl. Phys. Lett. 100, 152115 (2012)


Copyright (2012) American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in Appl. Phys. Lett. 100, 152115 (2012) and may be found at The following article has been submitted to/accepted by Applied Physics Letters. Copyright (2012) Han Liu, Kun Xu, Xujie Zhang and Peide D. Ye. This article is distributed under a Creative Commons Attribution 3.0 Unported License.


We investigate the integration of Al2O3 high-k dielectric on two-dimensional (2D) crystals of boron nitride (BN) and molybdenum disulfide (MoS2) by atomic layer deposition (ALD). We demonstrate the feasibility of direct ALD growth with trimethylaluminum and water as precursors on both 2D crystals. Through theoretical and experimental studies, we found that the initial ALD cycles play the critical role, during which physical adsorption dominates precursor adsorption at the crystal surface. We model the initial ALD growth stages at the 2D surface by analyzing Lennard-Jones potentials, which could guide future optimization of the ALD process on 2D crystals. (C) 2012 American Institute of Physics. []


Nanoscience and Nanotechnology