Interface barriers at the interfaces of polar GaAs(111) faces with Al2O3

H.Y. Chou, Katholieke Univ Leuven
E. O'Connor, University College Cork
P.K. Hurley, University College Cork
V.V. Afanas'ev, Katholieke Univ Leuven
M. Houssa, Katholieke Univ Leuven
A. Stesmans, Katholieke Univ Leuven
Peide Ye, Birck Nanotechnology Center, Purdue University
S.B. Newcomb, Glebe Sci Ltd

Date of this Version



Appl. Phys. Lett. 100, 141602 (2012)


Copyright (2012) American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in Appl. Phys. Lett. 100, 141602 (2012) and may be found at The following article has been submitted to/accepted by Applied Physics Letters. Copyright (2012). H. Y. Chou, E. O’Connor, P. K. Hurley, V. V. Afanas’ev, M. Houssa, A. Stesmans, P. D. Ye and S. B. Newcomb. This article is distributed under a Creative Commons Attribution 3.0 Unported License.


Internal photoemission measurements of barriers for electrons at interfaces between GaAs(111) and atomic-layer deposited Al2O3 indicate that changing the GaAs polar crystal face orientation from the Ga-terminated (111)A to the As-terminated (111)B has no effect on the barrier height and remains the same as at the non-polar GaAs(100)/Al2O3 interface. Moreover, the presence of native oxide on GaAs(111) or passivation of this surface with sulphur also have no measurable influence on the GaAs(111)/Al2O3 barrier. These results suggest that the orientation and composition-sensitive surface dipoles conventionally observed at GaAs surfaces are effectively compensated at GaAs/oxide interfaces. (C) 2012 American Institute of Physics. []


Nanoscience and Nanotechnology