Improvement of near-infrared absorption linewidth in AlGaN/GaN superlattices by optimization of delta-doping location
Date of this Version
9-3-2012Citation
Appl. Phys. Lett. 101, 102104 (2012); http://dx.doi.org/10.1063/1.4751040
Abstract
We report a systematic study of the near-infrared intersubband absorption in AlGaN/GaN superlattices grown by plasma-assisted molecular-beam epitaxy as a function of Si-doping profile with and without delta-doping. The transition energies are in agreement with theoretical calculations including many-body effects. A dramatic reduction of the intersubband absorption linewidth is observed when the delta-doping is placed at the end of the quantum well. This reduction is attributed to the improvement of interface roughness. The linewidth dependence on interface roughness is well reproduced by a model that considers the distribution of well widths measured with transmission electron microscopy. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.4751040]
Discipline(s)
Nanoscience and Nanotechnology
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Copyright (2012) American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in Appl. Phys. Lett. 101, 102104 (2012) and may be found at http://dx.doi.org/10.1063/1.4751040. The following article has been submitted to/accepted by Applied Physics Letters. Copyright (2012) C. Edmunds, L. Tang, J. Shao, D. Li, M. Cervantes, G. Gardner, D. N. Zakharov, M. J. Manfra, and O. Malis. This article is distributed under a Creative Commons Attribution 3.0 Unported License.