Understanding the Impact of Schottky Barriers on the Performance of Narrow Bandgap Nanowire Field Effect Transistors

Yanjie Zhao, Birck Nanotechnology Center, Purdue University
Drew Candebat, Birck Nanotechnology Center, Purdue University
Collin J. Delker, Birck Nanotechnology Center, Purdue University
Yunlong Zi, Purdue University
David B. Janes, Birck Nanotechnology Center, Purdue University
Joerg Appenzeller, Birck Nanotechnology Center, Purdue University
Chen Yang, Purdue University

Date of this Version



Nano Lett., 2012, 12 (10), pp 5331–5336 DOI: 10.1021/nl302684s


Semiconductor nanowires have been explored as alternative electronic materials for high performance device applications exhibiting low power consumption specs. Electrical transport in III-V nanowire (NW) field-effect transistors (FETs) is frequently governed by Schottky barriers between the source/drain and the NW channel. Consequently the device performance is greatly impacted by the contacts. Here we present a simple model that explains how ambipolar device characteristics of NW-FETs and in particular the achievable on/off current ratio can be analyzed to gain a detailed idea of (a) the bandgap of the synthesized NWs and (b) the potential performance of various NW materials. In particular, we compare the model with our own transport measurements on InSb and InAs NW-FETs as well as results published by other groups. The analysis confirms excellent agreement with the predictions of the model, highlighting the potential of our approach to understand novel NW based materials and devices and to bridge material development and device applications.


Nanoscience and Nanotechnology