Topological insulator Bi2Te3 films synthesized by metal organic chemical vapor deposition
Date of this Version
10-15-2012Citation
Appl. Phys. Lett. 101, 162104 (2012)
Abstract
Topological insulator (TI) materials such as Bi2Te3 and Bi2Se3 have attracted strong recent interests. Large scale, high quality TI thin films are important for developing TI-based device applications. In this work, structural and electronic properties of Bi2Te3 thin films deposited by metal organic chemical vapor deposition (MOCVD) on GaAs (001) substrates were characterized via x-ray diffraction (XRD), Raman spectroscopy, angle-resolved photoemission spectroscopy (ARPES), and electronic transport measurements. The characteristic topological surface states with a single Dirac cone have been clearly revealed in the electronic band structure measured by ARPES, confirming the TI nature of the MOCVD Bi2Te3 films. Resistivity and Hall effect measurements have demonstrated relatively high bulk carrier mobility of similar to 350 cm(2)/Vs at 300 K and similar to 7400 cm(2)/Vs at 15 K. We have also measured the Seebeck coefficient of the films. Our demonstration of high quality topological insulator films grown by a simple and scalable method is of interests for both fundamental research and practical applications of thermoelectric and TI materials. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.4760226]
Discipline(s)
Nanoscience and Nanotechnology
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Copyright (2012) American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in Appl. Phys. Lett. 101, 162104 (2012) and may be found at http://dx.doi.org/10.1063/1.4760226. The following article has been submitted to/accepted by Applied Physics Letters. Copyright (2012) Helin Cao, Rama Venkatasubramanian, Chang Liu, Jonathan Pierce, Haoran Yang, M. Zahid Hasan, Yue Wu and Yong P. Chen. This article is distributed under a Creative Commons Attribution 3.0 Unported License.