On the Interpretation of Ballistic Injection Velocity in Deeply Scaled MOSFETs (vol 59, pg 994, 2012)
Date of this Version12-2012
IEEE Transactions on Electron Devices 59(4):994-1001 · April 2012
In the above-named article [ibid., vol. 59, no. 4, pp. 994-1001, Apr. 2012], the authors showed that the velocity deduced by analyzing transistor I-V data with the virtual-source transistor model of Khakifirooz, et al. (2009) is not always the velocity at the top of the energy barrier between the source and channel. Reference 1 in the Appendix of the original article (on screening in nanoscale MOSFETs) presented a qualitative explanation for why this discrepancy is more pronounced in Si MOSFETs than in III-V MOSFETs. This note points out an error in the original article but does not change the qualitative argument.
Nanoscience and Nanotechnology