On the Interpretation of Ballistic Injection Velocity in Deeply Scaled MOSFETs (vol 59, pg 994, 2012)

Yang Liu, International Business Machines (IBM)
Mathieu Luisier, Swiss Federal Institute of Technology Zurich
Dimitri Antoniadis, Massachusetts Institute of Technology (MIT)
Amlan Majumdar, International Business Machines (IBM)
Mark S. Lundstrom, Birck Nanotechnology Center, Purdue University

Date of this Version



IEEE Transactions on Electron Devices 59(4):994-1001 · April 2012


In the above-named article [ibid., vol. 59, no. 4, pp. 994-1001, Apr. 2012], the authors showed that the velocity deduced by analyzing transistor I-V data with the virtual-source transistor model of Khakifirooz, et al. (2009) is not always the velocity at the top of the energy barrier between the source and channel. Reference 1 in the Appendix of the original article (on screening in nanoscale MOSFETs) presented a qualitative explanation for why this discrepancy is more pronounced in Si MOSFETs than in III-V MOSFETs. This note points out an error in the original article but does not change the qualitative argument.


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