Suppressing Leakage by Localized Doping in Si Nanotransistor Channels

Jesse Maassen, McGill University; Birck Nanotechnology Center, Purdue University
Hong Guo, McGill University

Date of this Version

12-26-2012

Citation

Suppressing Leakage by Localized Doping in Si Nanotransistor Channels Jesse Maassen and Hong Guo. Phys. Rev. Lett. 109, 266803

Comments

This is the published version of Jesse Maassen and Hong Guo. 26 December 2012. Suppressing Leakage by Localized Doping in Si Nanotransistor Channels. First published in the Physical Review Letters and is available online at: https://doi.org/10.1103/PhysRevLett.109.266803

Abstract

By first principles atomistic analysis we demonstrate how controlled localized doping distributions in nanoscale Si transistors can suppress leakage currents. We consider dopants (B and P atoms) to be randomly confined to a approximate to 1 nmwidth doping region in the channel. If this region is located away from the electrodes, roughly 20% of the channel length L, the tunneling leakage is reduced 2x compared to the case of uniform doping and shows little variation. Oppositely, we find the leakage current increases by orders of magnitude and may result in large device variability. We calculate the maximum and minimum conductance ratio that characterizes the tunnel leakage for various values of L. We conclude that doping engineering provides a possible approach to resolve the critical issue of leakage current in nanotransistors. DOI: 10.1103/PhysRevLett.109.266803

Discipline(s)

Nanoscience and Nanotechnology

 

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