Phonon-limited and effective low-field mobility in n- and p-type [100]-, [110]-, and [111]-oriented Si nanowire transistors

Mathieu Luisier, Purdue University

Date of this Version



Appl. Phys. Lett. 98, 032111 (2011)


Copyright (2011) American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in Appl. Phys. Lett. 98, 032111 (2011) and may be found at The following article has been submitted to/accepted by Applied Physics Letters. Copyright (2011) Mathieu Luisier. This article is distributed under a Creative Commons Attribution 3.0 Unported License.


Ultrascaled n- and p-type Si nanowire field-effect transistors (NW FETs) with [100], [110], and [111] as channel orientations are simulated in the presence of electron-phonon scattering using an atomistic quantum transport solver based on the sp(3)d(5)s* tight-binding model for electrons and holes, a modified Keating model for phonons, and the nonequilibrium Green's function formalism. The channel resistances of devices with different gate lengths and carrier concentrations are computed at room temperature and used to extract phonon-limited, ballistic, and effective low-field mobilities. It is found that a [110] channel represents the best choice for high n- and p-type NW FET performances. (c) 2011 American Institute of Physics. [doi:10.1063/1.3540689]


Nanoscience and Nanotechnology