A wideband CMOS distributed amplifier with slow-wave shielded transmission lines
Date of this Version2-2011
International Journal of Microwave and Wireless Technologies. Volume 3, Issue 1 February 2011, pp. 59-66. A wideband CMOS distributed amplifier with slow-wave shielded transmission lines. Rosa R. Lahiji, Linda P.B. Katehi and Saeed Mohammadi
A four-stage distributed amplifier utilizing low-loss slow-wave shielded (SWS) transmission lines is implemented in a standard 0.13 mm Complementary Metal-Oxide-Semiconductor (CMOS) technology. The amplifier when biased in its high current operating mode of I-Dtotal = 46 mA (at V-dd = 2.2 V, P-diss = 101 mW) provides a forward transmission gain of 11.3 +/- 1.5 dB with a 3-dB bandwidth of 17 GHz and a gain-bandwidth product of 74 GHz. The noise figure (NF) under the same bias condition is better than 8.5 dB up to 10 GHz. The measured output-referred 1-dB compression point is higher than +2 dBm. The amplifier is also measured under low-bias condition of I-Dtotal 18 mA (at V-dd = 1.15 V, P-diss = 20.7 mW). It provides a transmission gain of 6.6 +/- 1 dB, a 3-dB bandwidth of 14.8 GHz, a gain-bandwidth product of 35.5 GHz, and a NF of better than 8.6 dB up to 10 GHz. Despite using a simple four-stage cascode design, this distributed amplifier achieves very high-gain-bandwidth product at a relatively low DC power compared to the state of the art CMOS distributed amplifiers reported in the literature. This is due to the incorporation of low-loss SWS coplanar waveguide (CPW) transmission lines with a loss factor of nearly 50% of that of standard transmission lines on CMOS-grade Si substrate.
Nanoscience and Nanotechnology