Control of Current Saturation and Threshold Voltage Shift in Indium Oxide Nanowire Transistors with Femtosecond Laser Annealing

Chunghun Lee, Birck Nanotechnology Center, Purdue University
Pornsak Srisungsitthisunti, Birck Nanotechnology Center, Purdue University
Sangphill Park, Birck Nanotechnology Center, Purdue University
Seongmin Kim, Birck Nanotechnology Center, Purdue University
Xianfan Xu, Birck Nanotechnology Center, Purdue University
Kaushik Roy, Birck Nanotechnology Center, Purdue University
David B. Janes, Birck Nanotechnology Center, Purdue University
Chongwu Zhou, University of Southern California
Sanghyun Ju, Kyonggi University
Minghao Qi, Birck Nanotechnology Center, Purdue University

Date of this Version

2-2011

Citation

ACS Nano, 2011, 5 (2), pp 1095–1101

Abstract

Transistors based on various types of nonsilicon nanowires have shown great potential for a variety of applications, especially for those that require transparency and low-temperature substrates. However, critical requirements for circuit functionality, such as saturated source-drain current and matched threshold voltages of individual nanowire transistors in a way that Is compatible with low temperature substrates, have not been achieved. Here we show that femtosecond laser pulses can anneal individual transistors based on In(2)O(3) nanowires, improve the saturation of the source-drain current, and permanently shift the threshold voltage to the positive direction. We applied this technique and successfully shifted the switching threshold voltages of NMOS-based inverters and improved their noise margin, In both depletion and enhancement modes. Our demonstration provides a method to trim the parameters of individual nanowire transistors, and suggests potential for large-scale integration of nanowire-based circuit blocks and systems.

Discipline(s)

Nanoscience and Nanotechnology

 

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