Controlled Growth of Ordered Nanopore Arrays in GaN
Date of this Version
2-2011Citation
Nano Lett., 2011, 11 (2), pp 535–540 DOI: 10.1021/nl103418q
Abstract
High-quality, ordered nanopores in semiconductors are attractive for numerous biological, electrical, and optical applications. Here, GaN nanorods with continuous pores running axially through their centers were grown by organometallic vapor phase epitaxy. The porous nanorods nucleate on an underlying (0001)-oriented GaN film through openings in a SiN(x) template that are milled by a focused ion beam, allowing direct placement of porous nanorods. Nanopores with diameters ranging from 20-155 nm were synthesized with crystalline sidewalls.
Discipline(s)
Nanoscience and Nanotechnology
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